Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (9) , 1467-1472
- https://doi.org/10.1109/16.622603
Abstract
No abstract availableKeywords
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