Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 881-884
- https://doi.org/10.1109/iedm.1995.499357
Abstract
The threshold voltages of n-channel and p-channel thin-film Si-on-Insulator (SOI) MOSFETs have been controlled by employing Tantalum (Ta) for gate materials in 1 V applications. The threshold voltage control in SOI MOSFETs by the work function of gate material, that is, work function engineering is needed. In order to suppress the reaction between Ta and gate oxide, low-temperature processing after the gate oxide step was successfully established.Keywords
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