Low-resistance contacts to p-type Li-diffused CdTe
- 1 December 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (12) , 7041-7046
- https://doi.org/10.1063/1.331970
Abstract
Reproducible low‐resistance contacts to p‐type CdTe single crystals have been made by diffusion of Li into the CdTe surface before evaporation of Au as the contact metal. Diffusion produces a surface hole density of about 1019 cm−3 at room temperature; this results in a contact resistivity of the order of 0.01 Ω cm2, the lowest value reported to date for p‐type CdTe. The high diffusivity of Li results in a degradation of the contacts even at room temperature, with the degradation rate critically dependent on the temperature used for Li diffusion. The optimum temperature appears to be about 280 °C; contacts formed on surfaces diffused with Li at this temperature show a contact resistivity of 0.025 Ω cm2 after 5 months.This publication has 7 references indexed in Scilit:
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