The influence of implantation temperature and subsequent annealing on residual implantation defects in silicon
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 637-641
- https://doi.org/10.1016/0168-583x(91)96248-j
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ion-implantation associated defect production in siliconSolid-State Electronics, 1983
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Primary defects in low-fluence ion-implanted siliconApplied Physics Letters, 1980
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974