Analysis of the excitonic mott transition in GaSe
- 28 February 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 61 (5) , 321-325
- https://doi.org/10.1016/0038-1098(87)90305-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Photoluminescence of germanium near the screening ionization limit of excitonsJournal of Luminescence, 1985
- Electron theory of the optical properties of laser-excited semiconductorsProgress in Quantum Electronics, 1984
- Spontaneous and optically amplified luminescence from exciton-exciton collisions in GaSe at liquid-He temperaturePhysical Review B, 1983
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981
- Correlated pairs and a mass action law in two‐component Fermi systems excitons in an electron‐hole plasmaPhysica Status Solidi (b), 1979
- Final state interactions in the gain and absorption spectra of electron‐hole liquidsPhysica Status Solidi (b), 1978
- Exciton-exciton and exciton-carrier scattering in GaSePhysical Review B, 1975
- Photoluminescence ofGaSeIl Nuovo Cimento B (1971-1996), 1974
- Phase Shifts of the Static Screened Coulomb PotentialPhysical Review A, 1971
- Bound Eigenstates of the Static Screened Coulomb PotentialPhysical Review A, 1970