Micromagnetic simulations of magnetoresistive behavior of sub-micrometer spin-valve MRAM devices
Open Access
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 33 (5) , 3298-3300
- https://doi.org/10.1109/20.617923
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Performance Optimization Of Submicrometer Spin Valves For Digital ApplicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Size dependence of switching thresholds for pseudo spin valve MRAM cellsJournal of Applied Physics, 1997
- Magnetic tunneling applied to memory (invited)Journal of Applied Physics, 1997
- Micromagnetics of spin valve memory cellsIEEE Transactions on Magnetics, 1996
- Spin-valve RAM cellIEEE Transactions on Magnetics, 1995
- A micromagnetic model of dual-layer magnetic-recording thin filmsIEEE Transactions on Magnetics, 1993
- Dramatic enhancement of interlayer exchange coupling and giant magnetoresistance in Ni81Fe19/Cu multilayers by addition of thin Co interface layersApplied Physics Letters, 1992
- The design of a one megabit non-volatile M-R memory chip using 1.5*5 mu m cellsIEEE Transactions on Magnetics, 1988