Determination of Two Donor (Majority) Levels in Semiconductors from Hall Effect Measurements
- 1 January 1982
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 17 (8) , 1015-1024
- https://doi.org/10.1002/crat.2170170822
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in SemiconductorsPhysica Status Solidi (b), 1981
- On the electrical activity of oxygen in siliconPhysica Status Solidi (a), 1979
- Defect-level analysis of semiconductors by a new differential evaluation ofn(1/T)-characteristicsApplied Physics A, 1979
- An Algorithm for Least-Squares Estimation of Nonlinear ParametersJournal of the Society for Industrial and Applied Mathematics, 1963