Lower temperature post-annealing of thin films of YBa2Cu3O7 at lower oxygen partial pressure
- 28 January 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (4) , 417-418
- https://doi.org/10.1063/1.104654
Abstract
Thin films of YBa2Cu3O7 formed by ambient temperature deposition and furnace post‐annealing have been obtained at annealing temperatures around 750 °C and an oxygen partial pressure of 29 Pa. The zero resistance transition temperature of these smooth films on LaAlO3 was 89 K, and a critical current density in excess of 1 MA cm−2 at 77 K was found by transport measurements.Keywords
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