Dielectric and interface-state measurements of metal-spin-on-oxide-silicon capacitors
- 11 July 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (10) , 1477-1487
- https://doi.org/10.1088/0022-3727/9/10/013
Abstract
Spin-on oxide refers to a thin film of silicon dioxide deposited from an alcohol solution applied by spinning to the surface of the semiconductor wafer. The dielectric properties of the oxide have been studied by C-V measurement and interface-state density has been measured using the quasistatic and AC conductance techniques.Keywords
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