Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 4 (6) , G53-G55
- https://doi.org/10.1149/1.1369219
Abstract
Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200°C for samples doped with Ru in the range to In this doping range, the specific resistivity of structures accommodating electron injection is Ω cm and that of structures accommodating hole injection is as high as Ω cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively. © 2001 The Electrochemical Society. All rights reserved.Keywords
This publication has 6 references indexed in Scilit:
- LP-HVPE growth of S, Fe and undoped InPPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Studies of Internal Structure in InGaAsP/InP‐Based Lasers Using Atomic Force Microscopy in Combination with Selective EtchingJournal of the Electrochemical Society, 1999
- Ruthenium: A superior compensator of InPApplied Physics Letters, 1998
- Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor depositionJournal of Crystal Growth, 1998
- Hydride vapor phase epitaxy revisitedIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Universal iron behaviour in Zn-, Cd- and Be-doped p-type InPJournal of Crystal Growth, 1992