LP-HVPE growth of S, Fe and undoped InP
- 20 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Growth of semi-insulating InP:Fe in a low pressure hydride VPE system using elemental iron and ferrocene as dopant sourcesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hydride vapor phase epitaxy revisitedIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Planar InGaAs PIN photodiode with a semi-insulating InP cap layerElectronics Letters, 1985