The energy distribution of localized states in amorphous arsenic triselenide from transient photoconductivity measurements
- 7 November 1994
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 6 (45) , 9721-9728
- https://doi.org/10.1088/0953-8984/6/45/020
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- More evidence for a structured distribution of electronic states in a-As2Se3Journal of Physics: Condensed Matter, 1994
- New features in space-charge-limited-photocurrent transientsPhilosophical Magazine Part B, 1994
- Doped amorphous selenium based photoreceptors for electroradiography: Determination of x-ray sensitivityJournal of Non-Crystalline Solids, 1993
- Determination of gap-state distributions in amorphous semiconductors from transient photocurrents using a fourier transform techniqueSolid State Communications, 1992
- Distribution of gap states in a-As2Se3Philosophical Magazine Part B, 1990
- Reversible metastable defect centres in amorphous arsenic triselenideJournal of Non-Crystalline Solids, 1987
- The electronic and optical properties of nickel doped arsenic triselenideJournal of Non-Crystalline Solids, 1985
- Time-of-flight and photoconductivity studies of a-As2Se3 filmsSolid State Communications, 1983
- A trap-limited model for dispersive transport in semiconductorsPhilosophical Magazine, 1977
- Transport properties and electronic structure of glasses in the arsenic-selenium systemPhilosophical Magazine, 1976