MgB 2 Superconducting Thin Films with a Transition Temperature of 39 Kelvin
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- 25 May 2001
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 292 (5521) , 1521-1523
- https://doi.org/10.1126/science.1060822
Abstract
We fabricated high-quality caxis–oriented epitaxial MgB2 thin films using a pulsed laser deposition technique. The thin films grown on (1 1̄ 0 2) Al2O3 substrates have a transition temperature of 39 kelvin. The critical current density in zero field is ∼6 × 106 amperes per cubic centimeter at 5 kelvin and ∼3 × 105 amperes per cubic centimeter at 35 kelvin, which suggests that this compound has potential for electronic device applications, such as microwave devices and superconducting quantum interference devices. For the films deposited on Al2O3, x-ray diffraction patterns indicate a highly c axis–oriented crystal structure perpendicular to the substrate surface.Keywords
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This publication has 7 references indexed in Scilit:
- Superconductivity in DenseWiresPhysical Review Letters, 2001
- Thermodynamic and Transport Properties of SuperconductingPhysical Review Letters, 2001
- Strongly linked current flow in polycrystalline forms of the superconductor MgB2Nature, 2001
- Superconductivity at 39 K in magnesium diborideNature, 2001
- Growth of HgBa2Ca2Cu3O8 thin films using stable Re0.1Ba2Ca2Cu3Ox precursor by pulsed laser depositionApplied Physics Letters, 1998
- High current densities above 100 K in the high-temperature superconductor HgBa2CaCu2O6+δNature, 1995
- Mercury-Based Cuprate High-Transition Temperature Grain-Boundary Junctions and SQUIDs Operating Above 110 KelvinScience, 1994