Variable-range hopping in evaporated annealed films of the amorphous chalcogenides GeTe and SnTe
- 1 July 1978
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 29 (1) , 135-137
- https://doi.org/10.1016/0022-3093(78)90147-3
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Localized gap states in amorphous semiconducting compoundsPhilosophical Magazine, 1977
- Annealing behavior of quench-deposited amorphous GeTe and SnTe filmsJournal of Non-Crystalline Solids, 1977
- Paramagnetic States and Hopping Conductivity in a Chalcogenide Glass:Physical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- dc Conductivity of Amorphous Germanium and the Structure of the PseudogapPhysical Review Letters, 1973
- Properties of thin films of PbTe and SnTe deposited at temperatures between 4.2° and 300 °KThin Solid Films, 1970
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968