Annealing behavior of quench-deposited amorphous GeTe and SnTe films
- 1 May 1977
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 24 (1) , 131-136
- https://doi.org/10.1016/0022-3093(77)90067-9
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Effect of annealing on an amorphous GexTe1−x matrix with Te cristallitesJournal of Non-Crystalline Solids, 1976
- Structural, electrical, and optical properties of thermally evaporated amorphous gexte1–x filmsPhysica Status Solidi (a), 1975
- Photoconductivity in the amorphous Ge-rich Gex Te1—x systemJournal of Applied Physics, 1974
- Exponential photoconductive edge in amorphous GeTe∗Infrared Physics, 1974
- Amorphous Thin FilmsJournal of Vacuum Science and Technology, 1973
- Photoconductivity and Density of States for Amorphous GeTePhysical Review B, 1970
- Amorphous versus Crystalline GeTe Films. III. Electrical Properties and Band StructureJournal of Applied Physics, 1970
- Properties of thin films of PbTe and SnTe deposited at temperatures between 4.2° and 300 °KThin Solid Films, 1970
- Amorphous versus Crystalline GeTe Films. I. Growth and Structural BehaviorJournal of Applied Physics, 1969
- Electrical and Optical Properties of Amorphous vs Crystalline GeTe FilmsJournal of Vacuum Science and Technology, 1969