Exponential photoconductive edge in amorphous GeTe∗
- 31 May 1974
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 14 (2) , 139-144
- https://doi.org/10.1016/0020-0891(74)90014-1
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Exponential tail of the optical absorption edge of amorphous semiconductorsThin Solid Films, 1972
- Effect of ion bombardment on crystalline and amorphous films of As2Se3 and SeJournal of Non-Crystalline Solids, 1972
- Optical and photoelectric properties of amorphous siliconJournal of Non-Crystalline Solids, 1972
- The case for sharp band edges in amorphous Ge and SiJournal of Non-Crystalline Solids, 1972
- Influence of annealing on the optical properties of amorphous germanium filmsMaterials Research Bulletin, 1971
- Photoemission from Amorphous SiliconPhysical Review Letters, 1970
- Photoconductivity and Density of States for Amorphous GeTePhysical Review B, 1970
- Properties of glow-discharge deposited amorphous germanium and siliconJournal of Non-Crystalline Solids, 1970
- Photoconductivity and optical properties of amorphous GeTeJournal of Non-Crystalline Solids, 1970
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970