Optical and photoelectric properties of amorphous silicon
- 1 June 1972
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 8-10, 202-208
- https://doi.org/10.1016/0022-3093(72)90137-8
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Effective-impurity model of optical absorption edgesJournal of Non-Crystalline Solids, 1972
- States in the gapJournal of Non-Crystalline Solids, 1972
- Theory of amorphous semiconductorsPhysics Today, 1971
- Photoconductivity in amorphous germaniumOptics Communications, 1971
- Optical Properties of Amorphous Germanium FilmsPhysical Review B, 1970
- Photoconductivity of amorphous chalcogenide alloy filmsJournal of Non-Crystalline Solids, 1970
- Modification of the Silicon Absorption Edge by Radiation-Induced DefectsPhysical Review B, 1969
- Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy LevelsPhysical Review B, 1968
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962