Modification of the Silicon Absorption Edge by Radiation-Induced Defects
- 15 May 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 181 (3) , 1368-1369
- https://doi.org/10.1103/physrev.181.1368
Abstract
We suggest that this phenomenon may be explained by an internal Franz-Keldysh mechanism.Keywords
This publication has 14 references indexed in Scilit:
- Characteristics of Neutron Damage in SiliconPhysical Review B, 1968
- THE DIRECT ABSORPTION EDGE IN COVALENT SOLIDSApplied Physics Letters, 1967
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Phonon-Assisted ElectroabsorptionPhysical Review B, 1965
- Phonon-Assisted Optical Absorption in an Electric FieldPhysical Review B, 1965
- Effects of Radiation on SemiconductorsPublished by Springer Nature ,1965
- Electroabsorption Spectrum in SiliconPhysical Review Letters, 1964
- Electric Fields of Defects in SolidsPhysical Review B, 1963
- Infrared Absorption and Photoconductivity in Irradiated SiliconJournal of Applied Physics, 1959
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958