Multicomponent structure of electron emission from the Te-related DX center in AlGaAs

This publication has 8 references indexed in Scilit:

• Evidence for substitutional-interstitial defect motion leading to DX behavior by donors in ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{-}\mathit{x}}$As
  Physical Review Letters, 1992
• Parameters of multilevel structure of the DX centre in GaAlAs from pressure studies of the Hall effect
  Semiconductor Science and Technology, 1992
• Donor-related levels in GaAs and Al_xGa_1-xAs
  Semiconductor Science and Technology, 1991
• Te-related DX centre of GaAs and AlGaAs
  Semiconductor Science and Technology, 1991
• Pressure assisted studies of thermal emission from resonant DX centres: new evidence for multi-level structure of Si-DX centre in GaAlAs
  Semiconductor Science and Technology, 1991
• Pressure studies of resonant DX centers: Thermal emission from metastable Si and S donors in GaAs
  Journal of Applied Physics, 1990
• Effects of the local environment on the properties of D X centers in Si-doped GaAs and dilute AlxGa1−xAs alloys
  Applied Physics Letters, 1990
• Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
  Physical Review B, 1989