Pressure studies of resonant DX centers: Thermal emission from metastable Si and S donors in GaAs

1 October 1990

journal article
conference paper
Published by AIP Publishing in Journal of Applied Physics

Vol. 68 (7) , 3377-3380
https://doi.org/10.1063/1.346340

Abstract

The analysis of the process of establishing a thermal equilibrium in a GaAs sample, in which the metastable state was created by high pressure freeze‐out, makes possible a determination of the energy barrier for emission from resonant DX centers. We have found that Si and S centers exhibit qualitatively different pressure behavior. This result casts doubt on some models describing DX center.

This publication has 10 references indexed in Scilit:

Effects of the local environment on the properties of D X centers in Si-doped GaAs and dilute AlxGa1−xAs alloys
Applied Physics Letters, 1990
High pressure andDXcenters in heavily doped bulk GaAs
Physical Review B, 1989
The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration
Japanese Journal of Applied Physics, 1989
Energetics ofDX-center formation in GaAs and ${Al}_{x}$ ${Ga}_{1 - x}$ As alloys
Physical Review B, 1989
Metastability of the resonant Si level in Ga_0.86Al_0.14As
Semiconductor Science and Technology, 1989
Metastable Behavior of the DX Center in Si-Doped GaAs
Japanese Journal of Applied Physics, 1988
Electron Localization by a Metastable Donor Level in $n - GaAs$ : A New Mechanism Limiting the Free-Carrier Density
Physical Review Letters, 1988
Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
Japanese Journal of Applied Physics, 1985
Comprehensive analysis of Si-doped ${Al}_{x} {Ga}_{1 - x} As$ ( $x = 0 to 1$ ): Theory and experiments
Physical Review B, 1984
Capture and emission of electrons by the resonant state strongly coupled to the lattice in $n$ -InSb
Physical Review B, 1982