Ion beam induced charge gate rupture of oxide on 6H–SiC
- 1 July 2001
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 181 (1) , 324-328
- https://doi.org/10.1016/s0168-583x(01)00622-x
Abstract
No abstract availableKeywords
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