Optical on wafer measurement of Ge content of virtual SiGe-substrates

Publisher Website

1 December 1998

journal article
Published by Elsevier in Thin Solid Films

Vol. 336 (1-2) , 347-349
https://doi.org/10.1016/s0040-6090(98)01252-8

Abstract

No abstract available

Keywords

This publication has 4 references indexed in Scilit:

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Semiconductor Science and Technology, 1992
Physics and applications of Ge_xSi_1-x/Si strained-layer heterostructures
IEEE Journal of Quantum Electronics, 1986
Growth and properties of Si/SiGe superlattices
Surface Science, 1986
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped $Si / {Si}_{x} {Ge}_{1 - x}$ Superlattices
Physical Review Letters, 1985