Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and its Application to GaAs MESFETs
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2183
- https://doi.org/10.1143/jjap.27.l2183
Abstract
The effect of DC bias on the sputter-deposition of W and W-Al on GaAs substrates was investigated. By applying a negative bias to the substrate, the concentration of impurities in the metals and at the interface, such as oxygen, was reduced, and the characteristics of the Schottky contact were improved with respect to the barrier height, the n-value and the uniformity. These results are explained by the reverse sputtering effect for the substrate. This technique was applied to the gate formation of GaAs MESFETs, and the uniformity of the threshold voltage distribution within a 2-inch wafer was much improved.Keywords
This publication has 2 references indexed in Scilit:
- Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistorsJournal of Vacuum Science & Technology B, 1986
- Characterization of WSix/GaAs Schottky contactsApplied Physics Letters, 1983