Physical properties of amorphous silicon-carbon alloys produced by different techniques

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Abstract
Results of a study of compositional, optical, electrical, and structural properties of hydrogen amorphous silicon carbide (a-SiC:H) prepared, respectively, by glow-discharge (GD) and reactive sputtering (SP) techniques at power densities varying between 1.25 · 10−2 and 1.25 · 10−1 W · cm−2 for GD samples are presented. Measurements are reported on the composition, optical and IR spectroscopy, and on the temperature dependence of electrical conductivity. All experimental observations suggest that the power density only slightly affects the physical properties of GD silicon-rich samples, whereas those of the carbon-rich SP samples depend more strongly on this deposition parameter. Finally, it is shown that the GD technique can provide films with better characteristics, whereas samples of similar composition prepared by sputtering have higher compositional disorder and are more inhomogeneous.