Evidence for graphitic-type bonding in glow discharge hydrogenated amorphous silicon carbon alloys
- 15 April 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8) , 2717-2720
- https://doi.org/10.1063/1.335412
Abstract
Amorphous silicon carbon (a-SiC:H) films have been deposited by the glow discharge technique using SiH4 and CH4 gas mixtures. At high discharge powers and low deposition chamber pressures, evidence for graphitic-type bonding in C-deficient a-SiC:H is found and correlations are made between the appearance of this bonding with significant changes in the electronic and structural properties. This graphitic-type bonding can be minimized by significant H attachment to C via CHn (n=2, 3) bonding. This results in a-SiC:H films with low gap state densities and sharp Urbach tails.This publication has 24 references indexed in Scilit:
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