Properties of amorphous silicon tin alloys produced using the radio frequency glow discharge technique
- 15 January 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (2) , 220-222
- https://doi.org/10.1063/1.94716
Abstract
Amorphous silicon tin films have been deposited by the glow discharge technique using SiH4, H2, and SnCl4 or Sn (CH3)4 gas mixtures. An n to p-type conductivity transition with increasing Sn content in the films is found for both types of Sn alloying sources. Such a transition satisfactorily explains the observed dark and light conductivity behavior.Keywords
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