Defects in hydrogenated amorphous silicon-carbon alloy films prepared by glow discharge decomposition and sputtering
- 1 November 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (11) , 7299-7305
- https://doi.org/10.1063/1.329879
Abstract
Properties of hydrogenated amorphous silicon-carbon alloy (a-Si1−xCx :H) films prepared by radio frequency (rf) glow discharge decomposition and rf sputtering have been investigated by means of electron spin resonance (ESR), infrared absorption, optical absorption, and photoconductivity measurements. Although the number of C-H per C atom [C-H]/[C] is larger than that of Si-H per Si atom [Si-H]/[Si], the ESR spin density increases greatly with the C content. The increase in the density of dangling bonds may be related to the fact that the number of H atoms in gathered phase increases with an increase in x. ESR measurements also give useful information about the preferential formation of C or Si dangling bonds and the atomic distribution of Si and C through a compositional dependence of the g value. A remarkable feature for a-Si1−xCx :H film is that the presence of C atoms in the amorphous network makes the Si-H bond in a-Si1−xCx :H more stable than that in a-Si:H.This publication has 15 references indexed in Scilit:
- Glow Discharge a-Si1-xCx: H Films Studied by ESR and IR MeasurementsJapanese Journal of Applied Physics, 1982
- ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge DecompositionJapanese Journal of Applied Physics, 1981
- a-SiC:H/a-Si:H heterojunction solar cell having more than 7.1% conversion efficiencyApplied Physics Letters, 1981
- Photoluminescence and optical properties of plasma-deposited amorphous Si x C1–x alloysPhilosophical Magazine Part B, 1981
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981
- Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectraPhilosophical Magazine Part B, 1981
- White photoluminescence of amorphous silicon-carbon alloy prepared by glow-discharge decomposition of tetramethylsilaneApplied Physics Letters, 1980
- Reactive plasma deposited SixCyHz filmsThin Solid Films, 1979
- Vibrational spectrum of hydrogenated amorphous Si-C filmsPhysica Status Solidi (b), 1979
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977