Temperature-Independent Photoluminescence in Amorphous Si1-xCx: (F, H) Films with Low Defect Density

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Abstract
Photoluminescence and electron spin resonance measurements were carried out on amorphous silicon-carbon alloy film containing both F and H (a-Si1-x C x : (F, H)) prepared by the glow discharge decomposition of a mixture of SiH4 and CF4 gas. The a-Si1-x C x :(F, H) film, which had a wide optical gap (about 2.8 eV) had a smaller spin density and a photoluminescence with a higher intensity at room temperature and with a weaker temperature dependence than the a-Si1-x C x :H film with a similar optical gap. The temperature-independent photoluminescence appears to be due to an increase in the width of the band tail caused by the incorporation of F atoms.