Breakdown in silicon oxides—correlation with Cu precipitates
- 1 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3) , 270-271
- https://doi.org/10.1063/1.95168
Abstract
Thin oxides grown on silicon substrate in which Cu+ ions had been implanted before oxidation were studied by transmission electron microscope (TEM) and scanning TEM imaging methods. Cu precipitates, stacking faults, and dislocations appeared at the SiO2/Si interface on the degraded specimens. The Cu precipitates reduce the breakdown strength by local thinning of the oxide thickness. Stacking faults and dislocations, however, do not reduce the breakdown strength.Keywords
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