Hydrogen pile-up at interfaces between differently doped layers of amorphous silicon
- 1 April 1991
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 170 (1) , 529-532
- https://doi.org/10.1016/0921-4526(91)90171-a
Abstract
No abstract availableKeywords
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- Hydrogen profiles of interfaces in amorphous silicon devicesJournal of Non-Crystalline Solids, 1989
- Simulation of spectral characteristics for a-Si solar cellsJournal of Non-Crystalline Solids, 1989
- Characterization of superlattices based on amorphous siliconJournal of Applied Physics, 1987