Refractive index of GaP and its pressure dependence
- 15 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (10) , 6614-6619
- https://doi.org/10.1103/physrevb.32.6614
Abstract
The refractive index n of GaP and its dispersion have been measured at pressures P from 0 to 13 GPa. The pressures were applied with a diamond anvil cell and measured with the ruby fluorescence technique. Within the P range mentioned, n was shown to decrease sublinearly with pressure. The data were fitted with a model which includes the lowest direct energy gap , the corresponding bound exciton, and the gap as the main dispersion mechanisms. As fitting parameters only the strengths of the transition and its excitonic component were used.
Keywords
This publication has 33 references indexed in Scilit:
- Temperature dependence of the dielectric function and the interband critical points of InSbPhysical Review B, 1985
- Analysis of Photoelastic Behaviour of Fluorite‐Structure CrystalsPhysica Status Solidi (b), 1985
- The absorption spectrum of a heteropolar crystal : the rôle of many-particle effectsJournal de Physique, 1984
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Photoelastic trends for amorphous and crystalline solids of differing network dimensionalityPhysical Review B, 1981
- Extended bond orbital theory of piezoelectric and transverse chargesPhysical Review B, 1980
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- Behavior of the Electronic Dielectric Constant in Covalent and Ionic MaterialsPhysical Review B, 1971
- Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical BondPhysical Review Letters, 1971
- Intrinsic Piezobirefringence in GaSb, InAs, and InSbPhysical Review B, 1971