Influence of Free Carriers on the Faraday Rotation and Faraday Ellipticity in the Exciton Absorption Region of GaAs
- 1 June 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 57 (2) , 773-782
- https://doi.org/10.1002/pssb.2220570236
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Effective mass theoretical approach to optical and microwave phenomena in semiconductors—IIJournal of Physics and Chemistry of Solids, 1969
- Interband Faraday rotation and Voigt effect in GeJournal of Physics and Chemistry of Solids, 1969
- Faraday Rotation and Faraday Ellipticity in the Exciton Absorption Region of GaAsPhysica Status Solidi (b), 1969
- Interband Faraday Rotation in Gallium ArsenidePhysica Status Solidi (b), 1968
- Determination of the Optical Verdet Coefficient in Semiconductors and InsulatorsApplied Optics, 1967
- Effect of Internal Reflection on Optical Faraday RotationJournal of Applied Physics, 1966
- Faraday effect in semiconductors. IIProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964
- A Criterion for Exciton Binding in Dense Electron—Hole Systems—Application to Line Narrowing Observed in GaAsJournal of Applied Physics, 1963
- Zeeman-Type Magneto-Optical Studies of Interband Transitions in SemiconductorsPhysical Review B, 1959
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956