Spatial and energy distributions of secondary ions produced by ion bombardment of single crystals

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Abstract
Angular distribution of the 115In+ ions sputtered from the (111) and (1 1 1) polar faces of InSb single crystal has been experimentally studied. Angular and energy distributions of the 63Cu+ ions sputtered from the (100) Cu single crystal face were also studied. In the latter studies the use was made of a method permitting the energy distribution curve to be obtained in case of continuous cyclic passage through the various azymuthal angles of ion ejection. Such curve displays oscillations due to angular anisotropy of secondary ion emission and permits energy distributions to be obtained for all azymuthal angles of sccondary ion ejection (at given polar angles). The sputtering was under 5-10 keV Ne+ ion bombardment at a normal to the face. The ejection angles, energies, and masses of secondary ions were anialyzed using an installation which comprised a sector electrostatic energy analyzer with a 60° deflection angle and a magnetic mass-spectrometer. The angular distributions of the 115in+ and 65Cu+ ions were found to be similar to the corresponding distributions for neutral atoms observed during the Cu and InSb single crystal sputtering. It follows from the results of simultaneous studies of the 63Cu+ ion angular and energy distributions that relatively slow ions (up to 50-60 eV) are responsible for the angular distribution anisotropy. The distribution of the 63Cu+ high-energy component has bcen found to be practically isotropic.