Mass-Spectrometric Study of Sputtering of Single Crystals of GaAs by Low-Energy A Ions
- 1 June 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (7) , 2956-2960
- https://doi.org/10.1063/1.1710031
Abstract
Single crystals of GaAs [(110), (111), and (1̄1̄1̄) faces] were sputtered by normally incident low‐energy (0–140 eV) argon ions in the source of a mass spectrometer. For each face, approximately 99.4% of the collected ions were neutral Ga and As atomic species; the balance were neutral GaAs molecules. No neutral Ga2, As2 or (GaAs)2 molecules, or negative Ga−, As−, or (GaAs)− ions, with the characteristics of sputtered particles, were detected. Sputtering ``yields'' for the three faces were found to be: ``Y'' (111) ≈ ``Y'' (1̄1̄1̄) > ``Y'' (110).This publication has 7 references indexed in Scilit:
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