Threshold switching as a generation-recombination induced non-equilibrium phase transition
- 16 December 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 50 (2) , 423-426
- https://doi.org/10.1002/pssa.2210500208
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Memory and threshold switching effects in amorphous seleniumPhysica Status Solidi (a), 1977
- Recombination-induced non-equilibrium phase transitions in semiconductorsJournal of Physics C: Solid State Physics, 1976
- Switching times in amorphous boron, boron plus carbon, and silicon thin filmsJournal of Applied Physics, 1975
- Radiative and Auger processes in semiconductorsJournal of Luminescence, 1973
- Switching Phenomena in Thin FilmsJournal of Vacuum Science and Technology, 1973
- Impact ionization of deep-impurities (In, Ni, Au) in silicon†International Journal of Electronics, 1972
- A TEMPERATURE-INDEPENDENT CONDUCTING STATE IN TETRACENE THIN FILMApplied Physics Letters, 1969
- Recombination MechanismsPhysica Status Solidi (b), 1968