Synthesis and properties of tantalum nitride films formed by ion beam assisted deposition
- 31 October 1996
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 84 (1-3) , 429-433
- https://doi.org/10.1016/s0257-8972(95)02799-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiationJournal of Applied Physics, 1995
- Investigation of TaN films implanted with nitrogen and argon ionsSurface and Coatings Technology, 1994
- Effect of ion and atom masses on the crystallographic orientation of nitride films prepared by ion-beam-assisted depositionSurface and Coatings Technology, 1994
- Surface modification of M50 steel by dual-ion-beam dynamic mixingSurface and Coatings Technology, 1994
- Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputteringJournal of Vacuum Science & Technology A, 1991
- Properties of direct current magnetron reactively sputtered TaNJournal of Vacuum Science & Technology B, 1987
- Glow discharge mass spectrometry of sputtered tantalum nitrideJournal of Vacuum Science and Technology, 1981
- The production of tantalum nitride film resistors using a continuous sputtering machineThin Solid Films, 1979
- Structure of Tantalum NitridesJapanese Journal of Applied Physics, 1971