0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

1 May 1989

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 10 (5) , 186-188
https://doi.org/10.1109/55.31715

Abstract

Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/mm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency f/sub t/ of 68 GHz with an average f/sub t/ of 62 GHz across the wafer. The 0.25- mu m gate MESFETs also exhibit a maximum-available-gain cutoff frequency f/sub t/ greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.

Keywords

This publication has 10 references indexed in Scilit:

Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates
IEEE Electron Device Letters, 1988
Unusual C-V profiles of Si-implanted
IEEE Electron Device Letters, 1988
A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET
IEEE Electron Device Letters, 1988
0.1-µm Gate-length pseudomorphic HEMT's
IEEE Electron Device Letters, 1987
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
IEEE Electron Device Letters, 1986
dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor
Applied Physics Letters, 1986
Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors
Applied Physics Letters, 1984
GaAs MESFET's made by ion implantation into MOCVD Buffer layers
IEEE Electron Device Letters, 1984
Low noise GaAs metal-semiconductor field-effect transistor made by ion implantation
Applied Physics Letters, 1982
Optimal noise figure of microwave GaAs MESFET's
IEEE Transactions on Electron Devices, 1979