Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 371-373
- https://doi.org/10.1109/55.747
Abstract
Fully functional, 504-gate arrays have been fabricated on an MOCVD (metalorganic chemical-vapor deposition)-grown, 3-in-diameter, GaAs-on-silicon substrate. Each ECL (emitter-coupled-logic)-compatible gate array consists of an eight-bit adder, a D flip-flop, a 214 divider (with a divide-by-four tap), and a 263-stage inverter string. These circuits represent 90% gate utilization, or approximately 6600 transistors. The wafer-level yield of fully functional gate arrays is 10.7%. This demonstrates total functionality and yield for a digital circuit with LSI-level complexity using MOCVD-grown GaAs-on-silicon material and shows that this material, even with defect densities greater than 108 cm/sup -2/, is viable for high-density LSI circuits.<>Keywords
This publication has 8 references indexed in Scilit:
- GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrateIEEE Electron Device Letters, 1987
- Prospects for GaAs-on-Si LSI CircuitsMRS Proceedings, 1987
- Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substratesIEEE Electron Device Letters, 1986
- Growth of GaAs on Si and its Application to FETs and LEDsMRS Proceedings, 1986
- High Volume Production Growth of GaAs on Silicon SubstratesMRS Proceedings, 1986
- GaAs MESFET ring oscillator on Si substrateIEEE Transactions on Electron Devices, 1985
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984
- Growth of GaAs on Si by MOVCDJournal of Crystal Growth, 1984