Prospects for GaAs-on-Si LSI Circuits
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrateIEEE Electron Device Letters, 1987
- GaAs/AlGaAs heterojunction emitter-down bipolar transistors fabricated on GaAs-on-Si substrateIEEE Electron Device Letters, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET'sIEEE Electron Device Letters, 1986
- Microwave properties of self-aligned GaAs/AlGaAs heterojunction bipolar transistors on silicon substratesIEEE Electron Device Letters, 1986
- A dc and microwave comparison of GaAs MESFET's on GaAs and Si substratesIEEE Transactions on Electron Devices, 1986
- Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) SubstrateJapanese Journal of Applied Physics, 1984
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984