Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

Publisher Website
Google Scholar
Abstract
A single (100) monolayer InAs in GaAs is grown by conventional molecular-beam epitaxy. The structural properties of these highly strained single-monolayer quantum-well samples are investigated with high-resolution double-crystal x-ray diffractometry, double-crystal x-ray reflection topography, and transmission electron microscopy. The calculation of the x-ray-diffraction patterns within the framework of the dynamical diffraction theory provides the precise determination of the strain state and the thickness of the layer even in the submonolayer region. This approach allows us to prove the superior crystalline quality of the samples. In particular, no misfit dislocations are generated at the highly strained InAs/GaAs heterointerface as observed by x-ray topography. These results are confirmed by the high-resolution lattice image of the heterointerface, indicating the excellent homogeneity and flatness of the InAs lattice plane.