Excitonic transitions in strained-layerInxGa1−xAs/GaAs quantum wells

A study of the excitonic transitions in pseudomorphic quantum wells of ${\mathrm{In}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As grown on GaAs substrates is presented. The experimental data obtained by photoluminescence excitation and absorption techniques agree very well with our theoretical model. The model is based on phenomenological deformation potential theory and includes band nonparabolicity and valence-band-mixing terms. The same model, without any adjustable parameters, was also applied successfully to the ${\mathrm{In}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As/InP system before.