Sputtering Yield Measurements with Low-Energy Metal Ion Beams
- 1 June 1969
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 40 (7) , 2911-2916
- https://doi.org/10.1063/1.1658100
Abstract
Sputtering yields of metal ion beams on polycrystalline films for energies below 1 keV were measured in situ using crystal microbalance techniques. Self‐sputtering yields were determined for Au, Cu, Ag, Cr, and Al for energies from 10 to 500 eV. These yields were consistent with some previous noble‐gas sputtering yields when only the difference in ionic mass was taken into account. Residual oxygen significantly lowered the self‐sputtering yields of Al and Cr for all energies from 0 to 1 keV and the collection rate of oxygen was apparently greater for ions of about 10 eV. Sputtering yields of films by dissimilar metal ions were most strongly influenced by the type of metal in the beam, rather than by the target material, even for high ion energies.This publication has 9 references indexed in Scilit:
- Direct Gravimetric Calibration of a Quartz Crystal MicrobalanceReview of Scientific Instruments, 1968
- Ion Sampling Considerations for a Discharge Plasma of NitrogenJournal of Applied Physics, 1966
- Cesium Ion Sputtering of AluminumJournal of Applied Physics, 1966
- THE IONIC ENTRAPMENT AND THERMAL DESORPTION OF INERT GASES IN TUNGSTEN FOR KINETIC ENERGIES OF 40 EV TO 5 KEVCanadian Journal of Physics, 1964
- Sputtering Yields for Low Energy He+-, Kr+-, and Xe+-Ion BombardmentJournal of Applied Physics, 1962
- Sputtering Yields of Metals for Ar+ and Ne+ Ions with Energies from 50 to 600 evJournal of Applied Physics, 1961
- New Method for Measuring Sputtering in the Region Near ThresholdReview of Scientific Instruments, 1961
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961
- Electron Probe Measurements of Evaporated Metal FilmsJournal of Applied Physics, 1960