Growth of high quality InGaAsN heterostructures and their laser application
- 1 July 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 545-552
- https://doi.org/10.1016/s0022-0248(01)00764-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µmElectronics Letters, 2000
- Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µmElectronics Letters, 2000
- 8 W continuous wave operation of InGaAsN lasersat 1.3 µmElectronics Letters, 2000
- Single transverse mode operation of long wavelength(~1.3 µm)InAs GaAs quantum dot laserElectronics Letters, 1999
- Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µmElectronics Letters, 1999
- Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on PhotoluminescenceJapanese Journal of Applied Physics, 1999
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997