8 W continuous wave operation of InGaAsN lasersat 1.3 µm
- 3 August 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (16) , 1381-1382
- https://doi.org/10.1049/el:20000966
Abstract
The authors report on the generation of 8 W of optical power at 1.3 µm under continuous wave (CW) operation from a 100 µm aperture of an InGaAsN single quantum well laser. The laser was facet-coated and the active region maintained at 10°C by heatsinking. A preliminary lifetime test produced no noticeable degradation of laser characteristics after 1000 hours of CW operation at an output power of 1.5 W. Threshold current densities as low as 335 A/cm2 were measured on such broad area lasers. These values are a significant improvement over previously published data for lasers in the InGaAsN material system.Keywords
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