1.29 µm GaInNAs multiple quantum-well ridge-waveguidelaser diodes with improved performance
- 9 December 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (25) , 2204-2206
- https://doi.org/10.1049/el:19991513
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- 1.3 µm continuous-wave operation of GainNAslasers grown by metal organicchemical vapour depositionElectronics Letters, 1999
- Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µmElectronics Letters, 1999
- Band Anticrossing in GaInNAs AlloysPhysical Review Letters, 1999
- GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodesIEEE Photonics Technology Letters, 1998