Interface Modifications of InAs Quantum‐Dots Solids and their Effects on FET Performance
- 22 March 2010
- journal article
- research article
- Published by Wiley in Advanced Functional Materials
- Vol. 20 (6) , 1005-1010
- https://doi.org/10.1002/adfm.200902149
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Solar cells from colloidal nanocrystals: Fundamentals, materials, devices, and economicsCurrent Opinion in Colloid & Interface Science, 2009
- Tracing the Mechanism of Molecular Gated TransistorsThe Journal of Physical Chemistry C, 2009
- Thiols Passivate Recombination Centers in Colloidal Quantum Dots Leading to Enhanced Photovoltaic Device EfficiencyACS Nano, 2008
- Colloidal quantum dotsComptes Rendus Physique, 2008
- Hybrid nanocrystals-organic-semiconductor light sensorApplied Physics Letters, 2008
- Charge transport in PbSe nanocrystal arraysPhysical Review B, 2008
- Effects of the permanent dipoles of self-assembled monolayer-treated insulator surfaces on the field-effect mobility of a pentacene thin-film transistorApplied Physics Letters, 2007
- Variable Orbital Coupling in a Two-Dimensional Quantum-Dot Solid Probed on a Local ScalePhysical Review Letters, 2006
- Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulatorJournal of Applied Physics, 2004
- Modeling of organic thin film transistors of different designsJournal of Applied Physics, 2000