A structural imperfection in vapour-grown silicon
- 1 June 1964
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 9 (102) , 993-1002
- https://doi.org/10.1080/14786436408211910
Abstract
A star-like hillock observed in silicon vapour grown on {111} oriented silicon substrates has been studied using chemical etching and optical microscope techniques. It is deduced that the hillock consists of three equivalent single crystals embodied in the bulk crystal. This type of imperfection is presumed to be the result of multiple twinning during the growth process, initiated by foreign impurities on the substrate surface. The crystallography of the star-like hillock was determined on this basis.Keywords
This publication has 4 references indexed in Scilit:
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- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961
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