Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (2) , 367-374
- https://doi.org/10.1109/16.19938
Abstract
No abstract availableKeywords
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- Depletion-Layer Photoeffects in SemiconductorsPhysical Review B, 1959