Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 194-195
- https://doi.org/10.1109/leos.1998.739527
Abstract
We have demonstrated that independent control of three band-gaps across an InP-InGaAs-InGaAsP QW wafer can be achieved by a two-stage sputtered silica intermixing processes. This will be used for optimisation of the performance of optical switches which consist of passive components, modulators and amplifiers.Keywords
This publication has 3 references indexed in Scilit:
- Quantum well intermixing in material systems for 1.5 μm (invited)Journal of Vacuum Science & Technology A, 1998
- Extended cavity ridge waveguide lasers operatingat 1.5 µm using a simpledamage induced quantum well intermixing processElectronics Letters, 1997
- Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixingIEEE Journal of Quantum Electronics, 1997