Device geometry dependent effects of deep levels onC(U) measurements of ion-implanted MOS diodes
- 16 January 1977
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 39 (1) , 141-146
- https://doi.org/10.1002/pssa.2210390115
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Threshold Voltage Shift of Mos-Transistors by Ion Implantation of B, Al, Ga, P and AsPublished by Springer Nature ,1975
- MOS threshold shifting by ion implantationSolid-State Electronics, 1973